Venkatram Venkatasamy FORMATION OF HgCdTe (MCT) BY ELECTROCHEMICAL ATOMIC LAYER DEPOSITION

Venkatram Venkatasamy FORMATION OF HgCdTe (MCT) BY ELECTROCHEMICAL ATOMIC LAYER DEPOSITION

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Changes in deposit composition showed the expected trend in band gaps: the more Hg the lower the band gap, but with some significant deviations. The present study describes the growth of MCT via Electrochemical ALD, using an automated electrochemical flow cell deposition system. Electrochemical quartz crystal microbalance (EQCM) studies, using an automated flow cell, indicated that some deposited Cd was stripping at potentials used to deposit Hg. HgCdTe or Mer-Cad-Tel is the most widely used Infrared material. As deposited films showed a strong (111) preferred orientation. Deposits were characterized using X-ray diffraction (XRD), electron probe microanalysis (EPMA) and reflection absorption Fourier transform Infrared spectroscopy (FTIR). In addition, redox replacement of deposited Cd for Hg was evident, a function of the greater stability of Hg than Cd.

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